hi-sincerity microelectronics corp. spec. no. : mos200702 issued date : 2007.03.01 revised date : 2007.03.28 page no. : 1/4 H3055MJ hsmc product specification H3055MJ n-channel enhancement-mode mosfet (30v, 12a) description this n-channel 2.5v specified mosfet is a rugged gate version of advanced trench process. it has been optimized for power management applications with a wide range of gate drive voltage (2.5v-10v) features ? r ds(on) =45m ? @v gs =4.5v, i d =5.2a; r ds(on) =35m ? @v gs =10v, i d =6a ? high density cell design for ultra low on-resistance ? high power and current handing capability ? fully characterized avalanche voltage and current ? ideal for li ion battery pack applications applications ? battery protection ? load switch ? power management absolute maximum ratings (t a =25 o c, unless otherwise noted) symbol parameter ratings units v ds drain-source voltage 30 v v gs gate-source voltage 20 v i d drain current (continuous) 12 a i dm drain current (pulsed) *1 30 a total power dissipation @t a =25 o c 2 w p d total power dissipation @t a =75 o c 1.3 w t j , t stg operating and storage temperature range -55 to +150 c r ja thermal resistance junction to ambient *2 62.5 c/w *1: maximum dc current limited by the package *2: 1-in 2 2oz cu pcb board H3055MJ pin assignment 1 2 3 ta b 3-lead plastic to-252 package code: j pin 1: gate pin 2 & tab: drain pin 3: source internal schematic diagram g d s
hi-sincerity microelectronics corp. spec. no. : mos200702 issued date : 2007.03.01 revised date : 2007.03.28 page no. : 2/4 H3055MJ hsmc product specification electrical characteristics (t a =25 c, unless otherwise noted) symbol characteristic test conditions min. typ. max. unit ? static bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v v gs =4.5v, i d =5.2a - 34 45 r ds(on) drain-source on-state resistance v gs =10v, i d =6a - 25 35 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.6 - 1.5 v i dss zero gate voltage drain current v ds =30v, v gs =0v - - 1 ua i gss gate-body leakage current v gs = 20v, v ds =0v - - 100 na g fs forward transconductance v ds =10v, i d =6a 7 13 - s ? dynamic q g total gate charge - 4.2 - q gs gate-source charge - 1.2 - q gd gate-drain charge v ds =10v, i d =6a, v gs =6.9v - 1.7 - nc c iss input c apacitance - 410 - c oss output capacitance - 73 - c rss reverse transfer capacitance v ds =10v, v gs =0v, f=1mhz - 55 - pf t d(on) turn-on delay time - 3 - t r turn-on rise time - 2 - t d(off) turn-off delay time - 10 - t f turn-off fall time v dd =15v, i d =1a, v gen =10v r gen =3 ? , r l =2.2 ? - 3 - ns ? drain-source diode characteristics i s maximum diode forward current - - 4.3 a v sd drain-source diode forward voltage v gs =0v, i s =1a - - 1 v note: pulse test: pulse width 300us, duty cycle 2% g s d r d v dd v out v in r g v gen switching test circuit t d(on) t on t r 90% 10% 50% 10% input, v in output, v out t d(off) t off t f 90% 10% inverted 90% 50% pulse width switching waveforms
hi-sincerity microelectronics corp. spec. no. : mos200702 issued date : 2007.03.01 revised date : 2007.03.28 page no. : 3/4 H3055MJ hsmc product specification to-252 dimension important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of hsmc. ? hsmc reserves the right to make changes to its products without notice. ? hsmc semiconductor products are not warranted to be su itable for use in life-support applications, or systems. ? hsmc assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. head office and factory: ? head office (hi-sincerity microelectronics corp.): 10f.,no. 61, sec. 2, chung-shan n. rd. taipei taiwan r.o.c. tel: 886-2-25212056 fax: 886-2-25632712, 25368454 ? factory 1: no. 38, kuang fu s. rd., fu-kou hsin-chu industrial park hsin-chu taiwan. r.o.c tel: 886-3-5983621~5 fax: 886-3-5982931 m n a a2 a5 l c 3 2 1 a1 g h f a1 a b c d a1 e j k a2 a2 l f g h i y2 y2 a1 m y1 a1 o n y1 y1 3-lead to-252 plastic surface mount package hsmc package code: j marking: control code date code hj 30 pb free mark pb-free: " . " (note) normal: none 55m note: green label is used for pb-free packing pin style: 1.gate 2.drain 3.source material: ? lead solder plating: sn60/pb40 (normal), sn/3.0ag/0.5cu or pure-tin (pb-free) ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0 dim min. max. a 6.35 6.80 c 4.80 5.50 f 1.30 1.70 g 5.40 6.25 h 2.20 3.00 l 0.40 0.90 m 2.20 2.40 n 0.90 1.50 a1 0.40 0.65 a2 - *2.30 a5 0.65 1.05 *: typical, unit: mm marking: hj pb free mark pb-free: " . " (note) normal: none control code date code 3055m note: green label is used for pb-free packing pin style: 1.gate 2.drain 3.source material: ? lead solder plating: sn60/pb40 (normal), sn/3.0ag/0.5cu or pure-tin (pb-free) ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0 3-lead to-252 plastic surface mount package hsmc package code: j dim min. max. a 6.40 6.80 b - 6.00 c 5.04 5.64 d - *4.34 e 0.40 0.80 f 0.50 0.90 g 5.90 6.30 h 2.50 2.90 i 9.20 9.80 j 0.60 1.00 k - 0.96 l 0.66 0.86 m 2.20 2.40 n 0.70 1.10 o 0.82 1.22 a1 0.40 0.60 a2 2.10 2.50 y1 - 5 o y2 - 3 o *: typical, unit: mm
hi-sincerity microelectronics corp. spec. no. : mos200702 issued date : 2007.03.01 revised date : 2007.03.28 page no. : 4/4 H3055MJ hsmc product specification soldering methods for hsmc?s products 1. storage environment: temperature=10 o c~35 o c humidity=65%15% 2. reflow soldering of surface-mount devices profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (t l to t p ) <3 o c/sec <3 o c/sec preheat - temperature min (ts min ) - temperature max (ts max ) - time (min to max) (ts) 100 o c 150 o c 60~120 sec 150 o c 200 o c 60~180 sec ts m a x t o t l - ramp-up rate <3 o c/sec <3 o c/sec time maintained above: - temperature (t l ) - time (t l ) 183 o c 60~150 sec 217 o c 60~150 sec peak temperature (t p ) 240 o c +0/-5 o c 260 o c +0/-5 o c time within 5 o c of actual peak temperature (t p ) 10~30 sec 20~40 sec ramp-down rate <6 o c/sec <6 o c/sec time 25 o c to peak temperature <6 minutes <8 minutes 3. flow (wave) soldering (solder dipping) products peak temperature dipping time pb devices. 245 o c 5 o c 10sec 1sec pb-free devices. 260 o c 5 o c 10sec 1sec figure 1: temperature profile t p t l ramp-down ramp-up ts max ts min critical zone t l to t p t s preheat t l t p 25 t 25 o c to peak time temperature
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